Semiconductor device package having continously formed tapered protrusions

ABSTRACT

The present disclosure relates to a semiconductor device package including a substrate, a semiconductor device and an underfill. The substrate has a first surface and a second surface angled with respect to the first surface. The semiconductor device is mounted on the first surface of the substrate and has a first surface facing the first surface of the substrate and a second surface angled with respect to the first surface of the substrate. The underfill is disposed between the first surface of the semiconductor device and the first surface of the substrate. The second surface of the substrate is located in the substrate and external to a vertical projection of the semiconductor device on the first surface of the substrate. A distance between the second surface of the substrate and an extension of the second surface of the semiconductor device on the first surface of the substrate is less than or equal to twice a distance between the first surface of the semiconductor device and the first surface of the substrate. The second surface of the substrate extends along at least three sides of the semiconductor device.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a continuation of U.S. patent application Ser. No.15/619,413 filed Jun. 9, 2017, the contents of which is incorporatedherein by reference in its entirety.

BACKGROUND 1. Technical Field

The present disclosure relates to a semiconductor device package.

2. Description of the Related Art

In the past few years, as electronic products are developed toward beingthin and small, multi-functioned, and high-speed, high-density and highinput/output semiconductor package structures are increasingly used. Forthis reason, a flip chip package structure is now widely applied inhigh-performance products and portable electronic products.

Regarding the flip chip package structure, a semiconductor device (e.g.,a flip chip type die) includes multiple solder bumps at its activesurface and a substrate includes multiple solder pads. The solder bumpsof the semiconductor device are bonded to the solder pads of thesubstrate by reflow soldering such that the semiconductor device ismounted to a substrate and electrically connected to a conductivepattern of the substrate. Further, an underfill is applied or disposedunder the semiconductor device or between the semiconductor device andsubstrate so as to tightly join the semiconductor device and thesubstrate. However, in the underfill process, the underfill may bleed oroverflow to another area (which has, for example, other conductivestructures such as pads, traces, etc.) on the substrate and causeundesired issues.

SUMMARY

According to some embodiments of the instant disclosure, a semiconductordevice package includes a substrate, a semiconductor device and anunderfill. The substrate has a first surface and a second surface angled(e.g., substantially perpendicular at an angle of about 90 degrees or atanother non-zero angle) with respect to the first surface. Thesemiconductor device is mounted on the first surface of the substrateand has a first surface facing the first surface of the substrate and asecond surface angled (e.g., substantially perpendicular at an angle ofabout 90 degrees or at another non-zero angle) with respect to the firstsurface of the substrate. The underfill is disposed between the firstsurface of the semiconductor device and the first surface of thesubstrate. The second surface of the substrate is located in thesubstrate and external to a vertical projection of the semiconductordevice on the first surface of the substrate. A distance between thesecond surface of the substrate and an extension of the second surfaceof the semiconductor device on the first surface of the substrate isless than or equal to about twice a distance between the first surfaceof the semiconductor device and the first surface of the substrate. Thesecond surface of the substrate extends along at least three sides ofthe semiconductor device.

According to some embodiments of the instant disclosure, a semiconductordevice package includes a semiconductor device, a substrate and anunderfill. The semiconductor device has a first surface. Further, thesemiconductor device includes a first protrusion on the first surface ofthe semiconductor device, and the first protrusion is continuouslyformed along at least three edges of the first surface of thesemiconductor device. The substrate has a first surface facing the firstsurface of the semiconductor device. The underfill is disposed betweenthe first surface of the semiconductor device and the first surface ofthe substrate.

According to some embodiments of the instant disclosure, a semiconductordevice package includes a semiconductor device, a substrate and anunderfill. The substrate has a first surface and a mounting area on thefirst surface of the substrate. Further, the substrate includes a firstprotrusion disposed on the mounting area of the substrate, and the firstprotrusion is continuously formed along at least three sides of themounting area of the substrate. The semiconductor device is disposed onthe mounting area of the substrate and has a first surface facing thefirst surface of the substrate. The underfill is between the firstsurface of the semiconductor device, the first surface of the substrateand the mounting area of the substrate.

In order to further understand the instant disclosure, the followingembodiments are provided along with illustrations to facilitate anappreciation of the instant disclosure; however, the appended drawingsare merely provided for reference and illustration, without anyintention to be used for limiting the scope of the instant disclosure.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A is a top schematic view of a semiconductor device package inwhich an underfill is not filled in accordance with some embodiments ofthe instant disclosure.

FIG. 1B is a cross-sectional view along line I-I in FIG. 1A inaccordance with some embodiments of the instant disclosure.

FIG. 1C is a cross-sectional view of a semiconductor device package inwhich a flow of an underfill is filled in accordance with someembodiments of the instant disclosure.

FIG. 1D is an enlarged view of portion “A” in FIG. 1C in accordance withsome embodiments of the instant disclosure.

FIG. 2A is a cross-sectional view of a semiconductor device package inwhich an underfill is not filled in accordance with some embodiments ofthe instant disclosure.

FIG. 2B is a bottom view of a semiconductor device in accordance withsome embodiments of the instant disclosure.

FIG. 2C is a cross-sectional view of a semiconductor device package inwhich a flow of an underfill is filled therein in accordance with someembodiments of the instant disclosure.

FIG. 3A is a cross-sectional view of a semiconductor device package inwhich an underfill is not filled in accordance with some embodiments ofthe instant disclosure.

FIG. 3B is a bottom view of a semiconductor device in accordance withsome embodiments of the instant disclosure.

FIG. 3C is a cross-sectional view of a semiconductor device package inwhich a flow of an underfill is filled in accordance with someembodiments of the instant disclosure.

FIG. 4A is a cross-sectional view of a semiconductor device package inwhich an underfill is not filled in accordance with some embodiments ofthe instant disclosure.

FIG. 4B is a top view of a substrate in accordance with some embodimentsof the instant disclosure.

FIG. 4C is a cross-sectional view of a semiconductor device package inwhich a flow of an underfill is filled in accordance with someembodiments of the instant disclosure.

FIG. 5A is a cross-sectional view of a semiconductor device package inaccordance with some embodiments of the instant disclosure, in which theunderfill is not filled therein yet.

FIG. 5B is a top view of a substrate in accordance with some embodimentsof the instant disclosure.

FIG. 5C is a cross-sectional view of a semiconductor device package inwhich a flow of an underfill is filled in accordance with someembodiments of the instant disclosure.

FIG. 6A is a cross-sectional view of a semiconductor device package inwhich an underfill is not filled in accordance with some embodiments ofthe instant disclosure.

FIG. 6B is a bottom view of a semiconductor device in accordance withsome embodiments of the instant disclosure.

FIG. 6C is a top view of a substrate in accordance with some embodimentsof the instant disclosure.

FIG. 6D is a cross-sectional view of a semiconductor device package inwhich a flow of an underfill is filled in accordance with someembodiments of the instant disclosure.

FIG. 7A is a cross-sectional view of a semiconductor device package inwhich an underfill is not filled in accordance with some embodiments ofthe instant disclosure.

FIG. 7B is a bottom view of a semiconductor device in accordance withsome embodiments of the instant disclosure.

FIG. 7C is a top view of a substrate in accordance with some embodimentsof the instant disclosure.

FIG. 7D is a cross-sectional view of a semiconductor device package inwhich a flow of an underfill is filled in accordance with someembodiments of the instant disclosure.

Common reference numerals are used throughout the drawings and thedetailed description to indicate the same or similar elements.Embodiments of the present disclosure will be more apparent from thefollowing detailed description taken in conjunction with theaccompanying drawings.

DETAILED DESCRIPTION

The aforementioned illustrations and following detailed descriptions areexamples for the purpose of further explaining the scope of the instantdisclosure. Other objectives and advantages related to the instantdisclosure will be illustrated in the subsequent descriptions andappended drawings.

Spatial descriptions, such as “above,” “below,” “up,” “left,” “right,”“down,” “top,” “bottom,” “vertical,” “horizontal,” “side,” “higher,”“lower,” “upper,” “over,” “under,” and so forth, are indicated withrespect to the orientation shown in the figures unless otherwisespecified. It should be understood that the spatial descriptions usedherein are for purposes of illustration, and that practicalimplementations of the structures described herein can be spatiallyarranged in any orientation or manner, provided that the merits ofembodiments of this disclosure are not deviated from by sucharrangement.

FIGS. 1A and 1B show a semiconductor device package 1 in which anunderfill is not filled in accordance with some embodiments of theinstant disclosure. With reference to FIGS. 1A and 1B, the semiconductordevice package 1 includes a semiconductor device 12 and a substrate 13.The semiconductor device 12 has an active surface 121, wherein multiplesolder bumps 1212 are disposed on the active surface 121 of thesemiconductor device 12. Further, the semiconductor device 12 has atleast one side surface 123 which is substantially perpendicular to theactive surface 121. The substrate 13 comprises a conductive structure133 and a non-conductive structure 135, and the conductive structure 133can be a conductive pattern and the non-conductive structure 135 can bea solder resist or a dielectric layer. Further, the substrate 13includes multiple solder pads 1311 on its upper surface 131 which isfacing the active surface 121 of the semiconductor device 12. Themultiple solder pads 1311 are electrically connected to the conductivestructure 133 of the substrate 13. The solder bumps 1212 of thesemiconductor device 12 are bonded to the solder pads 1311 of thesubstrate 13 by a reflow soldering process such that the semiconductordevice 12 is mounted to the substrate 13 and electrically connected tothe conductive structure 133 of the substrate 13.

Referring to FIGS. 1A and 1B, a gap (or groove) 14 is formed on theupper surface 131 of the substrate 13 and external to a verticalprojection of the semiconductor device 12 on the upper surface 131 ofthe substrate 13. Further, as shown in FIG. 1A, the gap 14 substantiallyextends along at least three sides of the semiconductor device 12.Alternatively, the gap 14 can surround the semiconductor device 12. Inaddition, the gap 14 can be linear or wavy. The gap 14 has a sidesurface 141, wherein a distance between the side surface 141 of the gap14 and an extension of the side surface 123 of the semiconductor device12 on the upper surface 131 of the substrate 13 is less than or equal toabout twice a distance between the active surface 121 of thesemiconductor device 12 and the upper surface 131 of the substrate 13.In other words, an angle between the extension of the side surface 123of the semiconductor device 12 and a shortest line between thesemiconductor device 12 and the side surface 141 of the gap 14 is lessthan or equal to about 63.5 degrees. In some embodiments, the distancebetween the side surface 141 of the gap 14 and an extension of the sidesurface 123 of the semiconductor device 12 on the upper surface 131 ofthe substrate 13 is less than about 30 micrometers (μm). In someembodiments, the distance between the side surface 141 of the gap 14 andan extension of the side surface 123 of the semiconductor device 12 onthe upper surface 131 of the substrate 13 can be zero. In other words,the side surface 141 of the gap 14 and the side surface 123 of thesemiconductor device 12 can be substantially coplanar or aligned.Moreover, the gap 14 is arranged in the non-conductive structure 135 ofthe substrate 13 and the conductive structure 133 of the substrate 13 isnot exposed. In some embodiments, the gap 14 is U-shaped orrectangular-shaped.

FIG. 1C is a cross-sectional view of a semiconductor device package 1 inwhich a flow of an underfill 15 is filled in accordance with someembodiments of the instant disclosure. As shown in FIG. 1C, theunderfill 15 is filled between the semiconductor device 12 and thesubstrate 13. The underfill 15 flows into the space between the activesurface 121 of the semiconductor device 12 and the upper surface 131 ofthe substrate 13 and then the flow of the underfill 15 stops at the gap14 on the substrate 13. When the underfill 15 flows into the spacebetween the active surface 121 of the semiconductor device 12 and theupper surface 131 of the substrate 13 and arrives at the gap 14, asurface tension of the underfill 15 will be formed between the sidesurface 123 of the semiconductor and the side surface 141 of the gap 14.Then, the surface tension can stop the flow of the underfill 15 suchthat the underfill 15 will not overflow and not infiltrate another areaof the substrate 13.

FIG. 1D is an enlarged view of portion “A” in FIG. 1C. Referring to FIG.1D, the flow of the underfill 15 will be stopped by the surface tensionof the underfill 15 formed or disposed between the side surface 123 ofthe semiconductor and the side surface 141 of the gap 14 when the flowof underfill 15 arrives at the gap 14. As abovementioned, in someembodiments, the distance between the side surface 141 of the gap 14 andan extension of the side surface 123 of the semiconductor device 12 onthe upper surface 131 of the substrate 13 is less than or equal to abouttwice the distance between the active surface 121 of the semiconductordevice 12 and the upper surface 131 of the substrate 13. The surfacetension of the underfill 15 can be formed in such a configuration.Otherwise, if the distance between the side surface 141 of the gap 14and an extension of the side surface 123 of the semiconductor device 12on the upper surface 131 of the substrate 13 is larger than about twicethe distance between the active surface 121 of the semiconductor device12 and the upper surface 131 of the substrate 13, the surface tension ofthe underfill 15 may not be formed between the side surface 123 of thesemiconductor device 12 and the side surface 141 of the gap 14 and thenthe underfill 15 may flow into the gap 14 and overflow to another areaof the substrate 13.

FIG. 2A is a cross-sectional view of a semiconductor device package 2 inwhich the underfill is not filled in accordance with some embodiments ofthe instant disclosure. With reference to FIG. 2A, the semiconductordevice package 2 includes a semiconductor device 22 and a substrate 23.The semiconductor device 22 has an active surface 221, wherein multiplesolder bumps 2212 are disposed on the active surface 221 of thesemiconductor device 22. The substrate 23 comprises a conductivestructure 233 and a non-conductive structure 235, and the conductivestructure 233 can be a conductive pattern and the non-conductivestructure 235 can be a solder resist or a dielectric layer. Further, thesubstrate 23 includes multiple solder pads 2311 on its upper surface 231which is facing the active surface 221 of the semiconductor device 22.The multiple solder pads 2311 are electrically connected to theconductive structure 233 of the substrate 23. The solder bumps 2212 ofthe semiconductor device 22 are bonded to the solder pads 2311 of thesubstrate 23 by a reflow soldering process such that the semiconductordevice 22 is mounted to the substrate 23 and electrically connected tothe conductive structure 233 of the substrate 23.

FIG. 2B is a bottom view of the semiconductor device 22 in accordancewith some embodiments of the instant disclosure. Referring to FIGS. 2Aand 2B, a protrusion 225 is arranged adjacent to a periphery of theactive surface 221 of the semiconductor device 22, wherein theprotrusion 225 is continuously formed along at least three edges 2211 ofthe active surface 221 of the semiconductor device 22. In addition, thesolder bumps 2212 are substantially surrounded by the protrusion 225. Asshown in FIG. 2A, the protrusion 225 has an inclined top surface 2251such that a height at the edge of the protrusion 225 proximate to theside edge 2211 of the active surface 221 of the semiconductor device 22is larger than a height at the edge of the protrusion 225 distal fromthe side edge 2211 of the active surface 221 of the semiconductor device22. Thus, the protrusion 225 has a tapered structure which is tapered ina direction moving away from the side edge 2211 of the active surface221 of the semiconductor device 22. Further, the height at the edge ofthe protrusion 225 proximate to the side edge 2211 of the active surface221 of the semiconductor device 22 is less than or equal to about halfof the distance between the active surface 221 of the semiconductordevice 22 and the upper surface 231 of the substrate 23.

FIG. 2C is a cross-sectional view of the semiconductor device package 2in which a flow of an underfill 25 is filled in accordance with someembodiments of the instant disclosure. As shown in FIG. 2C, theunderfill 25 is filled between the semiconductor device 22 and thesubstrate 23. The underfill 25 flows into the space between the activesurface 221 of the semiconductor device 22 and the upper surface 231 ofthe substrate 23 and then the flow of the underfill 25 will stop at theedge of the protrusion 225 proximate to the side edge 2211 of the activesurface 221 of the semiconductor device 22. When the underfill 25 flowsinto the space between the active surface 221 of the semiconductordevice 22 and the upper surface 231 of the substrate 23 and passesthrough the protrusion 225, the flow of the underfill 25 will be changeddue to the tapered configuration of the protrusion 225. Further, thecontact angle between the underfill 25 and the semiconductor device 22will be changed accordingly such that the overflow of the underfill 25can be controlled.

FIG. 3A is a cross-sectional view of a semiconductor device package 3 inwhich an underfill is not filled in accordance with some embodiments ofthe instant disclosure. With reference to FIG. 3A, the semiconductordevice package 3 includes a semiconductor device 32 and a substrate 33.The semiconductor device 32 has an active surface 321, wherein multiplesolder bumps 3212 are disposed on the active surface 321 of thesemiconductor device 32. The substrate 33 comprises a conductivestructure 333 and a non-conductive structure 335, and the conductivestructure 333 can be a conductive pattern and the non-conductivestructure 335 can be a solder resist or a dielectric layer. Further, thesubstrate 33 includes multiple solder pads 3311 on its upper surface 331which is facing the active surface 321 of the semiconductor device 32.The multiple solder pads 3311 are electrically connected to theconductive structure 333 of the substrate 33. The solder bumps 3212 ofthe semiconductor device 32 are bonded to the solder pads 3311 of thesubstrate 33 by a reflow soldering process such that the semiconductordevice 32 is mounted to the substrate 33 and electrically connected tothe conductive structure 333 of the substrate 33.

FIG. 3B is a bottom view of the semiconductor device 32 in accordancewith some embodiments of the instant disclosure. Referring to FIGS. 3Aand 3B, a protrusion 325 is arranged adjacent to a periphery of theactive surface 321 of the semiconductor device 32, wherein theprotrusion 325 is continuously formed along at least three edges 3211 ofthe active surface 321 of the semiconductor device 32. In addition, thesolder bumps 3212 are substantially surrounded by the protrusion 325. Asshown in FIG. 3A, the protrusion 325 has an inclined top surface 3251such that a height at the edge of the protrusion 325 proximate to theside edge 3211 of the active surface 321 of the semiconductor device 22is smaller than a height at the edge of the protrusion 325 distal fromthe side edge 3211 of the active surface 321 of the semiconductor device32. Thus, the protrusion 325 has a tapered structure which is outwardlytapered toward the side edge 3211 of the active surface 321 of thesemiconductor device 32. Further, the height at the edge of theprotrusion 325 distal from the side edge 3211 of the active surface 321of the semiconductor device 32 is less than or equal to about half ofthe distance between the active surface 321 of the semiconductor device32 and the upper surface 331 of the substrate 33.

FIG. 3C is a cross-sectional view of a semiconductor device package 3 inwhich a flow of the underfill 35 is filled in accordance with someembodiments of the instant disclosure. As shown in FIG. 3C, theunderfill 35 is filled between the semiconductor device 32 and thesubstrate 33. The underfill 35 flows into the space between the activesurface 321 of the semiconductor device 32 and the upper surface 331 ofthe substrate 33 and then the flow of the underfill 25 will stop at theedge of the protrusion 325 proximate to the side edge 3211 of the activesurface 321 of the semiconductor device 32. When the underfill 35 flowsinto the space between the active surface 321 of the semiconductordevice 32 and the upper surface 331 of the substrate 33 and passesthrough the protrusion 325, the flow of the underfill 35 will be changeddue to the tapered configuration of the protrusion 325. Further, thecontact angle between the underfill 35 and the semiconductor device 32will be changed accordingly such that the overflow of the underfill 35can be controlled.

FIG. 4A is a cross-sectional view of a semiconductor device package 4 inwhich an underfill is not filled in accordance with some embodiments ofthe instant disclosure. With reference to FIG. 4A, the semiconductordevice package 4 includes a semiconductor device 42 and a substrate 43.The semiconductor device 42 has an active surface 421, wherein multiplesolder bumps 4212 are disposed on the active surface 421 of thesemiconductor device 42. The substrate 43 comprises a conductivestructure 433 and a non-conductive structure 435, and the conductivestructure 433 can be a conductive pattern and the non-conductivestructure 435 can be a solder resist or a dielectric layer. Further, thesubstrate 43 has a mounting area 437 on its upper surface 431 which isfacing the active surface 421 of the semiconductor device 42. Multiplesolder pads 4311 are arranged on the mounting area 437 and electricallyconnected to the conductive structure 433 of the substrate 43. Thesolder bumps 4212 of the semiconductor device 42 are bonded to thesolder pads 4311 of the substrate 43 by a reflow soldering process suchthat the semiconductor device 42 is mounted on the mounting area 437 ofthe substrate 43 and electrically connected to the conductive structure433 of the substrate 43.

FIG. 4B is a top view of the substrate 43 in accordance with someembodiments of the instant disclosure. Referring to FIGS. 4A and 4B, aprotrusion 439 is arranged on the mounting area 437 of the substrate 43,wherein the protrusion 439 is continuously formed along at least threeedges 4371 of the mounting area 437 of the substrate 43. In addition,the solder pads 4311 are substantially surrounded by the protrusion 439.As shown in FIG. 4A, the protrusion 439 has an inclined top surface 4391such that a height at the edge of the protrusion 439 proximate to theside edge 4371 of the mounting area 437 of the substrate 43 is largerthan a height at the edge of the protrusion 439 distal from the sideedge 4371 of the mounting area 437 of the substrate 43. Thus, theprotrusion 439 has a tapered structure which is inwardly tapered awayfrom the side edge 4371 of the mounting area 437 of the substrate 43.Further, the height at the edge of the protrusion 439 proximate to theside edge 4371 of the mounting area 437 of the substrate 43 is less thanor equal to about half of the distance between the active surface 421 ofthe semiconductor device 42 and the upper surface 431 of the substrate43.

FIG. 4C is a cross-sectional view of the semiconductor device package 4in which a flow of the underfill 45 is filled in accordance with someembodiments of the instant disclosure. As shown in FIG. 4C, theunderfill 45 is filled between the semiconductor device 42 and thesubstrate 43. The underfill 45 flows into the space between the activesurface 421 of the semiconductor device 42 and the mounting area 437 ofthe substrate 43 and then the flow of the underfill 45 will stop at theedge of the protrusion 439 proximate to the side edge 4371 of themounting area 437 of the substrate 43. When the underfill 45 flows intothe space between the active surface 421 of the semiconductor device 42and the mounting area 437 of the substrate 43 and passes through theprotrusion 439, the flow of the underfill 45 will be changed due to thetapered configuration of the protrusion 439. Further, the contact anglebetween the underfill 45 and the substrate 43 will be changedaccordingly such that the overflow of the underfill 45 can becontrolled.

FIG. 5A is a cross-sectional view of a semiconductor device package 5 inwhich an underfill is not filled in accordance with some embodiments ofthe instant disclosure. With reference to FIG. 5A, the semiconductordevice package 5 includes a semiconductor device 52 and a substrate 53.The semiconductor device 52 has an active surface 521, wherein multiplesolder bumps 5212 are disposed on the active surface 521 of thesemiconductor device 52. The substrate 53 comprises a conductivestructure 533 and a non-conductive structure 535, and the conductivestructure 533 can be a conductive pattern and the non-conductivestructure 535 can be a solder resist or a dielectric layer. Further, thesubstrate 53 has a mounting area 537 on its upper surface 531 which isfacing the active surface 521 of the semiconductor device 52. Multiplesolder pads 5311 are arranged on the mounting area 537 and electricallyconnected to the conductive structure 533 of the substrate 53. Thesolder bumps 5212 of the semiconductor device 52 are bonded to thesolder pads 5311 of the substrate 53 by a reflow soldering process suchthat the semiconductor device 52 is mounted on the mounting area 537 ofthe substrate 53 and electrically connected to the conductive structure533 of the substrate 53.

FIG. 5B is a top view of the substrate 53 in accordance with someembodiments of the instant disclosure. Referring to FIGS. 5A and 5B, aprotrusion 539 is arranged on the mounting area 537 of the substrate 53,wherein the protrusion 539 is continuously formed along at least threeedges 5371 of the mounting area 537 of the substrate 53. In addition,the solder pads 5311 are substantially surrounded by the protrusion 539.As shown in FIG. 5A, the protrusion 539 has an inclined top surface 5391such that a height at the edge of the protrusion 539 proximate to theside edge 5371 of the mounting area 537 of the substrate 53 is smallerthan a height at the edge of the protrusion 539 distal from the sideedge 5371 of the mounting area 537 of the substrate 53. Thus, theprotrusion 539 has a tapered structure which is outwardly tapered towardthe side edge 5371 of the mounting area 537 of the substrate 53.Further, the height at the edge of the protrusion 539 distal from theside edge 5371 of the mounting area 537 of the substrate 53 is less thanor equal to about half of the distance between the active surface 521 ofthe semiconductor device 52 and the upper surface 531 of the substrate53.

FIG. 5C is a cross-sectional view of a semiconductor device package 5 inwhich a flow of an underfill 55 is filled in accordance with someembodiments of the instant disclosure. As shown in FIG. 5C, theunderfill 55 is filled between the semiconductor device 52 and thesubstrate 53. The underfill 55 flows into the space between the activesurface 521 of the semiconductor device 52 and the mounting area 537 ofthe substrate 53 and then the flow of the underfill 55 will stop at theedge of the protrusion 539 proximate to the side edge 5371 of themounting area 537 of the substrate 53. When the underfill 55 flows intothe space between the active surface 521 of the semiconductor device 52and the mounting area 537 of the substrate 53 and passes through theprotrusion 539, the flow of the underfill 55 will be changed due to thetapered configuration of the protrusion 539. Further, the contact anglebetween the underfill 55 and the substrate 53 will be changedaccordingly such that the overflow of the underfill 55 can becontrolled.

FIG. 6A is a cross-sectional view of a semiconductor device package 6 inwhich an underfill is not filled in accordance with some embodiments ofthe instant disclosure. With reference to FIG. 6A, the semiconductordevice package 6 includes a semiconductor device 62 and a substrate 63.The semiconductor device 62 has an active surface 621, wherein multiplesolder bumps 6212 are disposed on the active surface 621 of thesemiconductor device 62. The substrate 63 comprises a conductivestructure 633 and a non-conductive structure 635, and the conductivestructure 633 can be a conductive pattern and the non-conductivestructure 635 can be a solder resist or a dielectric layer. Further, thesubstrate 63 has a mounting area 637 on its upper surface 631 which isfacing the active surface 621 of the semiconductor device 62. Multiplesolder pads 6311 are arranged on the mounting area 637 and electricallyconnected to the conductive structure 633 of the substrate 63. Thesolder bumps 6212 of the semiconductor device 62 are bonded to thesolder pads 6311 of the substrate 63 by a reflow soldering process suchthat the semiconductor device 62 is mounted on the mounting area 637 ofthe substrate 63 and electrically connected to the conductive structure633 of the substrate 63.

FIG. 6B is a bottom view of the semiconductor device 62 in accordancewith some embodiments of the instant disclosure. Referring to FIGS. 6Aand 6B, a protrusion 625 is arranged at the active surface 621 of thesemiconductor device 62, wherein the protrusion 625 is continuouslyformed along at least three edges 6211 of the active surface 621 of thesemiconductor device 62. In addition, the solder bumps 6212 aresubstantially surrounded by the protrusion 625. As shown in FIG. 6A, theprotrusion 625 has an inclined top surface 6251 such that a height atthe edge of the protrusion 625 proximate to the side edge 6211 of theactive surface 621 of the semiconductor device 62 is larger than aheight at the edge of the protrusion 625 distal from the side edge 6211of the active surface 621 of the semiconductor device 62. Thus, theprotrusion 625 has a tapered structure which is tapered inwardly awayfrom the side edge 6211 of the active surface 621 of the semiconductordevice 62.

FIG. 6C is a top view of the substrate 63 in accordance with someembodiments of the instant disclosure. Referring to FIGS. 6A and 6C, aprotrusion 639 is arranged on the mounting area 637 of the substrate 63,wherein the protrusion 639 is continuously formed along at least threeedges 6371 of the mounting area 637 of the substrate 63. In addition,the solder pads 6311 are substantially surrounded by the protrusion 639.As shown in FIG. 6A, the protrusion 639 has an inclined top surface 6391such that a height at the edge of the protrusion 639 proximate to theside edge 6371 of the mounting area 637 of the substrate 63 is largerthan a height at the edge of the protrusion 639 distal from the sideedge 6371 of the mounting area 637 of the substrate 63. Thus, theprotrusion 639 has a tapered structure which is tapered inwardly awayfrom the side edge 6371 of the mounting area 637 of the substrate 63.Further, the shortest distance between the protrusions 625 and 639 isgreater than or equal to about half of the distance between the activesurface 621 of the semiconductor device 62 and the upper surface 631 ofthe substrate 63. In some embodiments, the protrusions 625 and 639 aresubstantially symmetrical.

FIG. 6D is a cross-sectional view of the semiconductor device package 6in which a flow of the underfill 65 is filled therein in accordance withsome embodiments of the instant disclosure. As shown in FIG. 6D, theunderfill 65 is filled between the semiconductor device 62 and thesubstrate 63. The underfill 65 flows into the space between the activesurface 621 of the semiconductor device 62 and the mounting area 637 ofthe substrate 63 and then the flow of the underfill 65 will stop at theedge of the protrusion 625 proximate to the side edge 6211 of the activesurface 621 of the semiconductor device 62 and at the edge of theprotrusion 639 proximate to the side edge 6371 of the mounting area 637of the substrate 63. When the underfill 65 flows into the space betweenthe active surface 621 of the semiconductor device 62 and the mountingarea 637 of the substrate 63 and passes through the protrusions 625 and639, the flow of the underfill 65 will be changed due to the taperedconfigurations of the protrusions 625 and 639. Further, the contactangles between the underfill 65 and the semiconductor device 62 andbetween the underfill 65 and the substrate 63 will be changedaccordingly such that overflow of the underfill 65 can be controlled.

FIG. 7A is a cross-sectional view of a semiconductor device package 7 inwhich an underfill is not filled in accordance with some embodiments ofthe instant disclosure. With reference to FIG. 7A, the semiconductordevice package 7 includes a semiconductor device 72 and a substrate 73.The semiconductor device 72 has an active surface 721, wherein multiplesolder bumps 7212 are disposed on the active surface 721 of thesemiconductor device 72. The substrate 73 comprises a conductivestructure 733 and a non-conductive structure 735, and the conductivestructure 733 can be a conductive pattern and the non-conductivestructure 735 can be a solder resist or a dielectric layer. Further, thesubstrate 73 has a mounting area 737 on its upper surface 731 which isfacing the active surface 721 of the semiconductor device 72. Multiplesolder pads 7311 are arranged on the mounting area 737 and electricallyconnected to the conductive structure 733 of the substrate 73. Thesolder bumps 7212 of the semiconductor device 72 are bonded to thesolder pads 7311 of the substrate 73 by a reflow soldering process suchthat the semiconductor device 72 is mounted on the mounting area 737 ofthe substrate 73 and electrically connected to the conductive structure733 of the substrate 73.

FIG. 7B is a bottom view of the semiconductor device 72 in accordancewith some embodiments of the instant disclosure. Referring to FIGS. 7Aand 7B, a protrusion 725 is arranged at the active surface 721 of thesemiconductor device 72, wherein the protrusion 725 is continuouslyformed along at least three edges 7211 of the active surface 721 of thesemiconductor device 72. In addition, the solder bumps 7212 aresubstantially surrounded by the protrusion 725. As shown in FIG. 7A, theprotrusion 725 has an inclined top surface 7251 such that a height atthe edge of the protrusion 725 proximate to the side edge 7211 of theactive surface 721 of the semiconductor device 72 is less than a heightat the edge of the protrusion 725 distal from the side edge 7211 of theactive surface 721 of the semiconductor device 72. Thus, the protrusion725 has a tapered structure which is outwardly tapered toward the sideedge 7211 of the active surface 721 of the semiconductor device 72.

FIG. 7C is a top view of the substrate 73 in accordance with someembodiments of the instant disclosure. Referring to FIGS. 7A and 7C, aprotrusion 739 is arranged on the mounting area 737 of the substrate 73,wherein the protrusion 739 is continuously formed along at least threeedges 7371 of the mounting area 737 of the substrate 73. In addition,the solder pads 7311 are substantially surrounded by the protrusion 739.As shown in FIG. 7A, the protrusion 739 has an inclined top surface 7391such that a height at the edge of the protrusion 739 proximate to theside edge 7371 of the mounting area 737 of the substrate 73 is less thana height at the edge of the protrusion 739 distal from the side edge7371 of the mounting area 737 of the substrate 73. Thus, the protrusion739 has a tapered structure which is outwardly tapered toward the sideedge 7371 of the mounting area 737 of the substrate 73. Further, theshortest distance between the protrusions 725 and 739 is greater than orequal to about half of the distance between the active surface 721 ofthe semiconductor device 72 and the upper surface 731 of the substrate73. In some embodiments, the protrusions 725 and 739 are substantiallysymmetrical.

FIG. 7D is a cross-sectional view of the semiconductor device package 7in which a flow of an underfill 75 is filled therein in accordance withsome embodiments of the instant disclosure. As shown in FIG. 7D, theunderfill 75 is filled between the semiconductor device 72 and thesubstrate 73. The underfill 75 flows into the space between the activesurface 721 of the semiconductor device 72 and the mounting area 737 ofthe substrate 73 and then the flow of the underfill 75 will stop at theedge of the protrusion 725 proximate to the side edge 7211 of the activesurface 721 of the semiconductor device 72 and at the edge of theprotrusion 739 proximate to the side edge 7371 of the mounting area 737of the substrate 73. When the underfill 75 flows into the space betweenthe active surface 721 of the semiconductor device 72 and the mountingarea 737 of the substrate 73 and passes through the protrusions 725 and739, the flow of the underfill 75 will be changed due to the taperedconfigurations of the protrusions 725 and 739. Further, the contactangles between the underfill 75 and the semiconductor device 72 andbetween the underfill 75 and the substrate 73 will be changedaccordingly such that overflow of the underfill 75 can be controlled.

The above embodiments describe the principle and effects of the presentdisclosure, instead of being used to limit the present disclosure.Therefore, persons skilled in the art can make modifications andvariations to the above embodiments without departing from the spirit ofthe present disclosure. The scope of the present disclosure should bedefined by the appended claims.

As used herein, the terms “approximately,” “substantially,”“substantial” and “about” are used to describe and account for smallvariations. When used in conjunction with an event or circumstance, theterms can refer to instances in which the event or circumstance occursprecisely as well as instances in which the event or circumstance occursto a close approximation. For example, when used in conjunction with anumerical value, the terms can refer to a variation of less than orequal to ±10% of the numerical value, such as less than or equal to ±5%,less than or equal to ±4%, less than or equal to ±3%, less than or equalto ±2%, less than or equal to ±1%, less than or equal to ±0.5%, lessthan or equal to ±0.1%, or less than or equal to ±0.05%. Thus, the term“approximately equal” in reference to two values can refer to a ratio ofthe two values being within a range between and inclusive of 0.9 and1.1.

Additionally, amounts, ratios, and other numerical values are sometimespresented herein in a range format. It is to be understood that suchrange format is used for convenience and brevity and should beunderstood flexibly to include numerical values explicitly specified aslimits of a range, but also to include all individual numerical valuesor sub-ranges encompassed within that range as if each numerical valueand sub-range is explicitly specified.

Two surfaces or sides can be deemed to be coplanar or aligned if adisplacement between the two surfaces is no greater than 0.5 μm, nogreater than 1 μm, no greater than 5 μm, no greater than 10 μm, or nogreater than 15 μm. In the description of some embodiments, a componentprovided “on” another component can encompass cases where the formercomponent is directly on (e.g., in physical contact with) the lattercomponent, as well as cases where one or more intervening components arelocated between the former component and the latter component.

While the present disclosure has been described and illustrated withreference to specific embodiments thereof, these descriptions andillustrations do not limit the present disclosure. It should beunderstood by those skilled in the art that various changes may be madeand equivalents may be substituted without departing from the truespirit and scope of the present disclosure as defined by the appendedclaims. The illustrations may not necessarily be drawn to scale. Theremay be distinctions between the artistic renditions in the presentdisclosure and the actual apparatus due to manufacturing processes andtolerances. There may be other embodiments of the present disclosurewhich are not specifically illustrated. The specification and drawingsare to be regarded as illustrative rather than restrictive.Modifications may be made to adapt a particular situation, material,composition of matter, method, or process to the objective, spirit andscope of the present disclosure. All such modifications are intended tobe within the scope of the claims appended hereto. While the methodsdisclosed herein have been described with reference to particularoperations performed in a particular order, it will be understood thatthese operations may be combined, sub-divided, or re-ordered to form anequivalent method without departing from the teachings of the presentdisclosure. Accordingly, unless specifically indicated herein, the orderand grouping of the operations are not limitations of the presentdisclosure.

What is claimed is:
 1. A semiconductor device package, comprising: asubstrate having a surface and comprising a first protrusion disposed onthe surface of the substrate, and the first protrusion continuouslyformed along at least three edges of the surface of the substrate; asemiconductor device disposed on the surface of the substrate and havinga surface facing the surface of the substrate; an underfill formingbetween the surface of the semiconductor device and the surface of thesubstrate; and a second protrusion on the surface of the semiconductordevice; wherein the first protrusion is within a vertical projection ofthe semiconductor device on the surface of the substrate, and the firstprotrusion has a tapered structure.
 2. The semiconductor device packageof claim 1, wherein a height of the first protrusion is less than orequal to half of a distance between the surface of the substrate and thesurface of the semiconductor device.
 3. The semiconductor device packageof claim 1, further a mounting area on the surface of the substrate,wherein the first protrusion is disposed on the mounting area.
 4. Thesemiconductor device package of claim 3, wherein the first protrusionhas an inclined top surface such that a height at the edge of the firstprotrusion proximate to a side edge of the mounting area is larger thana height at the edge of the first protrusion distal from the side edgeof the mounting area.
 5. The semiconductor device package of claim 4,wherein the height at the edge of the first protrusion proximate to theside edge of the mounting area is less than or equal to half of adistance between the surface of the semiconductor device and the surfaceof the substrate.
 6. The semiconductor device package of claim 3,wherein the first protrusion is inwardly tapered from a side edge of themounting area of the substrate.
 7. The semiconductor device package ofclaim 3, wherein the first protrusion is outwardly tapered toward a sideedge of the mounting area.
 8. The semiconductor device package of claim1, wherein the first protrusion and the second protrusion aresubstantially symmetrical.
 9. The semiconductor device package of claim1, wherein a shortest distance between the first and second protrusionsis greater than or equal to half of a distance between the surface ofthe semiconductor device and the surface of the substrate.
 10. Thesemiconductor device package of claim 1, further comprising a pluralityof bumps surrounded by the first protrusion.
 11. A semiconductor devicepackage, comprising: a substrate having a surface and comprising a firstprotrusion disposed on the surface of the substrate, a semiconductordevice disposed on the surface of the substrate and having a surfacefacing the surface of the substrate; an underfill forming between thesurface of the semiconductor device and the surface of the substrate;and a second protrusion on the surface of the semiconductor device;wherein the surface of the substrate has a mounting area underneath thesemiconductor device and corresponding to the surface of thesemiconductor device, and wherein the first protrusion has a taperedstructure and the first protrusion is arranged within the mounting areaand continuously formed along at least three edges of the mounting area,and wherein the at least three edges of the mounting area align withthree side surfaces of the semiconductor device respectively.
 12. Thesemiconductor device package of claim 11, wherein a height of the firstprotrusion is less than or equal to half of a distance between thesurface of the substrate and the surface of the semiconductor device.13. The semiconductor device package of claim 11, wherein the firstprotrusion has an inclined top surface such that a height at the edge ofthe first protrusion proximate to a side edge of the mounting area islarger than a height at the edge of the first protrusion distal from theside edge of the mounting area.
 14. The semiconductor device package ofclaim 13, wherein the height at the edge of the first protrusionproximate to the side edge of the mounting area is less than or equal tohalf of a distance between the surface of the semiconductor device andthe surface of the substrate.
 15. The semiconductor device package ofclaim 11, wherein the first protrusion has an inclined top surface suchthat a height at the edge of the first protrusion proximate to the sideedge of the mounting area is smaller than a height at the edge of thefirst protrusion distal from the side edge of the mounting area.
 16. Thesemiconductor device package of claim 15, wherein the height at the edgeof the first protrusion distal from the side edge of the mounting areais less than or equal to about half of the distance between the surfaceof the semiconductor device and the surface of the substrate.
 17. Thesemiconductor device package of claim 11, wherein the first protrusionand the second protrusion are substantially symmetrical.
 18. Thesemiconductor device package of claim 11, wherein a shortest distancebetween the first and second protrusions is greater than or equal tohalf of a distance between the surface of the semiconductor device andthe surface of the substrate.